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IPD80R1K4P7 N Channel Mosfet Transistor TO-252

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IPD80R1K4P7 N Channel Mosfet Transistor TO-252

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Brand Name : INFINEON

Model Number : IPD80R1K4P7

Place of Origin : original

MOQ : 1pcs

Payment Terms : D/A, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 37830pcs

Delivery Time : 3

Packaging Details : 4000

Stock : 8000+

Price : Negotiate

quality： : Brand new unused

Package / box : TO-252

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ISO9001.pdf

Application:
IPD80R1K4P7 is an N-channel MOSFET transistor commonly used in high-efficiency DC-DC converters and power supply applications. It can operate at low voltage and has low resistance and high switching speed, making it very suitable for use in low voltage applications.
Conclusion:
IPD80R1K4P7 has the following characteristics:
Very low switching and conduction losses;
High voltage limit, capable of operating at high voltage;
High switching speed enables efficient DC-DC converters;
High temperature stability, capable of working in high temperature environments.
Parameters:
The key parameters of IPD80R1K4P7 are as follows:
Rated current: 80A;
Rated voltage: 40V;
Maximum drain power supply voltage: 55V;
Static resistance: 1.4m Ω;
Typical capacitance: 2000pF;
Working temperature range: -55 ° C~+175 ° C;
Packaging type: TO-252 (DPAK).

Product Technical Specifications
EU RoHS Compliant with Exemption聽
ECCN (US) EAR99
Part Status Unconfirmed
HTS 8541.29.00.95
SVHC Yes
SVHC Exceeds Threshold Yes
Automotive No
PPAP No
Product Category Power MOSFET
Configuration Single
Process Technology CoolMOS P7
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 800
Maximum Gate Source Voltage (V) 20
Maximum Gate Threshold Voltage (V) 3.5
Maximum Continuous Drain Current (A) 4
Maximum Gate Source Leakage Current (nA) 1000
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (mOhm) 1400@10V
Typical Gate Charge @ Vgs (nC) 10@10V
Typical Gate Charge @ 10V (nC) 10
Typical Input Capacitance @ Vds (pF) 250@500V
Maximum Power Dissipation (mW) 32000
Typical Fall Time (ns) 20
Typical Rise Time (ns) 8
Typical Turn-Off Delay Time (ns) 40
Typical Turn-On Delay Time (ns) 10
Minimum Operating Temperature (掳C) -55
Maximum Operating Temperature (掳C) 150
Packaging Tape and Reel
Mounting Surface Mount
Package Height 2.41(Max)
Package Width 6.22(Max)
Package Length 6.73(Max)
PCB changed 2
Tab Tab
Supplier Package DPAK
Pin Count 3

Product Tags:

IPD80R1K4P7 N Channel Mosfet Transistor

      

TO-252 N Channel Mosfet Transistor

      

IPD80R1K4P7 Integrated Circuit Ic Chip

      
China IPD80R1K4P7 N Channel Mosfet Transistor TO-252 factory

IPD80R1K4P7 N Channel Mosfet Transistor TO-252 Images

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